Channel 5 is set to broadcast Power: The Downfall of Huw Edwards tonight. This feature-length drama, crafted by Wonderhood Studios, features Martin Clunes - known for his roles in Doc Martin and ...
A new technical paper titled “Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes” was published by researchers at Samsung and Seoul National University. Find the ...
Enhances performance and efficiency in switched-mode power supplies for industrial equipment with improved figure-of-merit (RDS(ON) x Qg). Toshiba Electronics Europe has launched the TPH2R70AR5, a new ...
P-channel power MOSFETs are now part of Infineon Technologies’ mix of radiation-tolerant MOSFETs for low-Earth-orbit (LEO) systems. Included in the company’s expanding portfolio of devices for ...
The TACM (Topographically-Augmented Channel Model) Dataset provides realistic channel models for automatic modulation recognition (AMR) research by combining modulated signals from the ...
Abstract: Short-channel effects in thin-film silicon-on-insulator (SOI) MOSFETs are shown to be unique because of dependences on film thickness and body and back-gate (substrate) biases. These ...
The latest addition from Infineon brings a compelling balance of performance, cost-effectiveness, and availability to the NewSpace market. In an interview with Power Electronics News, Jutta ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...